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data sheet the information in this document is subject to change without notice. document no. p11433ej3v0ds00 (3rd edition) date published december 1997 ns cp(k) printed in japan photocoupler ps2525-1,-2,-4,ps2525l-1,-2,-4 large forward input type ac input response type multi photocoupler siries ? 1993 - nepoc tm series - the mark ? ? ? ? shows major revised points. description the ps2525-1, -2, -4 and ps2525l-1, -2, -4 are optically coupled isolators containing gaas light emitting diodes and an npn silicon phototransistor. the ps2525-1, -2, -4 are in a plastic dip (dual in-line package) and the ps2525l-1, -2, -4 are lead bending type (gull-wing) for surface mount. features ? large forward input current (i f = 150 ma) ? ac input response ? high isolation voltage (bv = 5 000 vr.m.s.) ? high collector to emitter voltage (v ceo = 80 v) ? high-speed switching (t r = 3 m s typ., t f = 5 m s typ.) ? ordering number of taping product: ps2525l-1-e3, e4, f3, f4, ps2525l-2-e3, e4 ? ul approved: file no. e72422 (s) applications ? exchange equipment ? fax/modem ? lcr adapter
2 ps2525-1,-2,-4,ps2525l-1,-2,-4 package dimensions (in millimeters) dip type ps2525-4 6.5 0 to 15? 7.62 ps2525-2 6.5 0 to 15? 7.62 10.2 max. 3.8 max. 2.8 min. 0.65 4.55 max. 0.500.10 0.25 m 1.250.15 2.54 ps2525-1 5.1 max. 6.5 0 to 15? 7.62 3.8 max. 2.8 min. 0.65 4.55 max. 2.54 0.500.10 0.25 m 1.250.15 3.8 max. 2.8 min. 0.65 4.55 max. 2.54 0.500.10 0.25 m 1.250.15 20.3 max. top view 1. anode, cathode 2. cathode, anode 3. emitter 4. collector 43 12 top view 1, 3. anode, cathode 2, 4. cathode, anode 5, 7. emitter 6, 8. collector 87 65 12 34 top view 1, 3, 5, 7. anode, cathode 2, 4, 6, 8. cathode, anode 9, 11, 13, 15. emitter 10, 12, 14, 16. collector 16 15 14 13 12 11 10 9 12 345678
3 ps2525-1,-2,-4,ps2525l-1,-2,-4 lead bending type 6.5 7.62 0.90.25 0.05 to 0.2 9.600.4 6.5 7.62 0.90.25 0.05 to 0.2 9.600.4 ps2525l-4 ps2525l-2 ps2525l-1 1.250.15 0.25 m 3.8 max. 2.54 10.2 max. 5.1 max. 20.3 max. 6.5 7.62 0.90.25 0.05 to 0.2 9.600.4 3.8 max. 2.54 1.250.15 0.25 m 3.8 max. 2.54 1.250.15 0.25 m top view 1, 3. anode, cathode 2, 4. cathode, anode 5, 7. emitter 6, 8. collector 87 65 12 34 top view 1. anode, cathode 2. cathode, anode 3. emitter 4. collector 43 12 top view 1, 3, 5, 7. anode, cathode 2, 4, 6, 8. cathode, anode 9, 11, 13, 15. emitter 10, 12, 14, 16. collector 16 15 14 13 12 11 10 9 12 345678
4 ps2525-1,-2,-4,ps2525l-1,-2,-4 absolute maximum ratings (t a = 25 c, unless otherwise specified) ratings parameter symbol ps2525-1, ps2525l-1 ps2525-2, -4, ps2525l-2, -4 unit diode forward current (dc) i f 150 ma power dissipation derating d p d / c 2.5 2.0 mw/ c power dissipation p d 250 200 mw/ch peak forward current *1 i fp 1a transistor collector to emitter voltage v ceo 80 v emitter to collector voltage v eco 6v collector current i c 50 ma/ch power dissipation derating d p c / c 1.5 1.2 mw/ c power dissipation p c 150 120 mw/ch isolation voltage *2 bv 5 000 vr.m.s. operating ambient temperature t a - 55 to +100 c storage temperature t stg - 55 to +150 c *1 pw = 100 m s, duty cycle = 1 % *2 ac voltage for 1 minute at t a = 25 c, rh = 60 % between input and output
5 ps2525-1,-2,-4,ps2525l-1,-2,-4 electrical characteristics (t a = 25 c) parameter symbol conditions min. typ. max. unit diode forward voltage v f i f = 100 ma 1.3 1.7 v terminal capacitance c t v = 0 v, f = 1.0 mhz 140 pf transistor collector to emitter dark current i ceo v ce = 80 v, i f = 0 ma 100 na coupled current transfer ratio ctr i f = 100 ma, v ce = 3 v 20 80 % ctr ratio *1 ctr 1 / ctr 2 i f = 100 ma, v ce = 3 v 0.3 1.0 3.0 collector saturation voltage v ce (sat) i f = 100 ma, i c = 4 ma 0.3 v isolation resistance r i-o v i-o = 1.0 kv dc 10 11 w isolation capacitance c i-o v = 0 v, f = 1.0 mhz 0.6 pf rise time *2 t r v cc = 10 v, i c = 2 ma, r l = 100 w 3 m s fall time *2 t f 5 *1 ctr 1 = i c1 /i f1 , ctr 2 = i c2 /i f2 i f1 i f2 i f1 i f2 v ce *2 test circuit for switching time (pw = 100 s, duty cycle = 1/10) m pulse input v cc v out r l = 100 w 50 w i f
6 ps2525-1,-2,-4,ps2525l-1,-2,-4 typical characteristics (t a = 25 c, unless otherwise specified) 100 0.1 1 0.01 10 0.4 1.0 1.4 1.6 0.8 1.2 0.6 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage +25 ?c 0 ?c C25 ?c C55 ?c t a = +100 ?c +75 ?c +50 ?c 10 000 0.1 100 1 000 10 1 C60 0 40 80 C40 C20 20 60 100 ambient temperature t a (?c) collector to emitter dark current vs. ambient temperature collector to emitter dark current i ceo (na) v ce = 80 v 40 v 24 v 10 v 5 v 50 0.01 10 0.1 1 5 0.5 0.05 0.2 0.6 1.0 0.0 0.4 0.8 collector saturation voltage v ce (sat) (v) collector current i c (ma) collector current vs. collector saturation voltage 5 ma 2 ma 1 ma i f = 50 ma 20 ma 10 ma 250 100 50 0 200 150 25 75 100 125 50 ambient temperature t a (?c) diode power dissipation p d (mw) diode power dissipation vs. ambient temperature ps2525-1 ps2525l-1 ps2525-2, -4 ps2525l-2, -4 2.5 mw/?c 2.0 mw/?c 150 C150 100 C100 50 0 C50 0.5 1.5 C1.0 C0.5 1.0 C1.5 0.0 forward voltage v f (v) forward current i f (ma) forward current vs. forward voltage 150 100 50 0 25 100 75 125 50 ambient temperature t a (?c) transistor power dissipation p c (mw) transistor power dissipation vs. ambient temperature ps2525-1 ps2525l-1 ps2525-2, -4 ps2525l-2, -4 1.5 mw/?c 1.2 mw/?c
7 ps2525-1,-2,-4,ps2525l-1,-2,-4 normalized to 1.0 at t a = 25 ?c, i f = 100 ma, v ce = 3 v 1.4 0.6 0.0 0.8 1.0 0.4 0.2 1.2 02550 100 C50 C25 75 ambient temperature t a (?c) normalized current transfer ratio vs. ambient temperature normalized current transfer ratio ctr v cc = 10 v, i c = 2 ma 100 5 1 50 10 50 200 1 k 2 k 100 500 load resistance r l ( w ) switching time vs. load resistance switching time t ( s) m t on t off t f t r 250 150 50 0 200 100 0.5 5 50 0.1 1 10 100 forward current i f (ma) current transfer ratio ctr (%) current transfer ratio vs. forward current v ce = 3 v sample a b c 1.2 1.0 0.0 0.4 0.2 0.8 0.6 10 2 10 3 110 4 10 5 10 6 time (hr) long term ctr degradation ctr (relative value) ctr test condition i f = 5 ma, v ce = 5 v i f = 5 ma 20 ma 40 ma 70 0 60 20 50 40 30 10 610 24 8 collector to emitter voltage v ce (v) collector current i c (ma) collector current vs. collector to emitter voltage i f = 50 ma 20 ma 10 ma 5 ma C6 0 C3 C9 C12 5 k 500 k 500 100 k 100 10 k 50 k 1 k frequency f (hz) normalized gain g v frequency response r l = 100 w 500 w 330 f m 1 k w v cc = 5 v i c = 2 ma r l 50 w remark the measurement of typical characteristics are only for reference, not guaranteed.
8 ps2525-1,-2,-4,ps2525l-1,-2,-4 taping specifications (in millimeters) tape direction ps2525l-1-e3, f3 ps2525l-1-e4, f4 outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.550.1 1.750.1 4.30.2 10.30.1 0.3 7.50.1 16.00.3 5.60.1 8.00.1 outline and dimensions (reel) packing: ps2525l-1-e3, e4 1 000 pcs/reel ps2525l-1-f3, f4 2 000 pcs/reel 2.00.5 r 1.0 13.00.5 f 21.00.8 f 16.4 +2.0 C0.0 ps2525l-1-e3, e4: 250 ps2525l-1-f3, f4: 330 f f 80.05.0 f
9 ps2525-1,-2,-4,ps2525l-1,-2,-4 tape direction ps2525l-2-e3 PS2525L-2-E4 outline and dimensions (tape) 1.550.1 2.00.1 4.00.1 1.550.1 1.750.1 4.30.2 10.30.1 0.3 7.50.1 16.00.3 10.40.1 12.00.1 outline and dimensions (reel) packing: 1 000 pcs/reel 16.4 +2.0 C0.0 80.05.0 f 330 f 2.00.5 r 1.0 13.00.5 f 21.00.8 f
10 ps2525-1,-2,-4,ps2525l-1,-2,-4 recommended soldering conditions (1) infrared reflow soldering ? peak reflow temperature 235 c (package surface temperature) ? time of temperature higher than 210 c 30 seconds or less ? number of reflows three ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.) 60 to 90 s (preheating) 210 ?c 120 to 160 ?c package surface temperature t (?c) time (s) (heating) to 10 s to 30 s 235 ?c (peak temperature) recommended temperature profile of infrared reflow peak temperature 235 ?c or below caution please avoid to removed the residual flux by water after the first reflow processes. (2) dip soldering ? temperature 260 c or below (molten solder temperature) ? time 10 seconds or less ? number of times one ? flux rosin flux containing small amount of chlorine (the flux with a maximum chlorine content of 0.2 wt % is recommended.)
11 ps2525-1,-2,-4,ps2525l-1,-2,-4 [memo]
ps2525-1,-2,-4,ps2525l-1,-2,-4 caution within this device there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. nepoc is a trademark of nec corporation. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5

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